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MICRONAS
HAL556, HAL560, HAL566 Two-Wire Hall Effect Sensor Family
Edition Aug. 3, 2000 6251-425-2DS
MICRONAS
HAL55x, HAL56x
Contents Page 3 3 3 4 4 4 4 5 6 6 6 6 7 7 8 9 12 12 14 16 18 18 18 18 19 19 20 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Descriptions HAL556 HAL560 HAL566 Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD Data Sheet History
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Micronas
HAL55x, HAL56x
Two-Wire Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 4 V to 24 V in the junction temperature range from -40 C up to 170 C. All sensors are available in the SMD-package SOT-89B and in the leaded version TO-92UA. 1.1. Features: - current output for two-wire applications - junction temperature range from -40 C up to 170 C. - operates from 4 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - switching offset compensation at typically 145 kHz - overvoltage and reverse-voltage protection - magnetic characteristics are robust against mechanical stress effects - constant magnetic switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 1.2. Family Overview The types differ according to the mode of switching and the magnetic switching points.
Type 556 560 566
Switching Behavior unipolar unipolar inverted unipolar inverted
Sensitivity very high low very high
see Page 12 14 16
Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side.
Micronas
3
HAL55x, HAL56x
1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type A HAL556 HAL560 HAL566 556A 560A 566A Temperature Range K 556K 560K 566K E 556E 560E 566E
VDD 1 3 NC
1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer section 5.4. on page 19 for details. 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 556, 560, or 566 Example: HAL556UA-E Type: 556 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors".
2 GND
Fig. 1-1: Pin configuration
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Micronas
HAL55x, HAL56x
2. Functional Description The HAL 55x, HAL 56x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external protection diode is needed for reverse voltages ranging from 0 V to -15 V.
VDD 1 Reverse Voltage & Overvoltage Protection
HAL55x, HAL 56x
Temperature Dependent Bias Hysteresis Control
Hall Plate Switch
Comparator Current Source
Clock GND 2
Fig. 2-1: HAL55x, HAL 56x block diagram
fosc
t B BOFF BON t IDD IDDhigh IDDlow t IDD
1/fosc = 6.9 s
t
Fig. 2-2: Timing diagram (example: HAL 56x)
Micronas
5
HAL55x, HAL56x
3. Specifications 3.1. Outline Dimensions
4.55 0.15 0.3 1.7 2 y sensitive area 0.2 1.5 0.3 y 3.05 0.1 4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 0.42 2 3 0.55 1.15 0.4 0.36 1 2 3 0.75 0.2 14.0 min. 2.55 top view 0.48 3.1 0.2 4.06 0.1 sensitive area 0.4
1.27 1.27 branded side 2.54
0.06 0.04
SPGS0022-5-A3/2E
branded side
Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm
45
SPGS7002-9-A/2E
0.8
Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x y center of the package 0.85 mm nominal TO-92UA center of the package 0.9 mm nominal
Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001.
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Micronas
HAL55x, HAL56x
3.4. Absolute Maximum Ratings Symbol VDD IDDZ TS TJ Parameter Supply Voltage Supply Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 Min. -151) 2) -502) -2003) -65 -40 -40 Max. 282) 502) 2003) 150 150 1704) Unit V mA mA C C
1) -18 V with a 100 series resistor at 2) as long as T max is not exceeded J 2) with a 220 series resistance at pin 3) t < 2 ms 4) t < 1000 h
pin 1 (-16 V with a 30 series resistor) 1 corresponding to test circuit 1 (see Fig. 5-3)
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions Symbol VDD TA ton Parameter Supply Voltage Ambient Temperature for continuos operation Supply Time for pulsed mode VDD 16 V Pin No. 1 Min. 4 -40 -40 30 Max. 24 851) 1252) - Unit V C C s
1) when using the "A" type or the "K" type and 2) when using the "A" type and V DD 13.2 V
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 19 for details.
Micronas
7
HAL55x, HAL56x
3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 4 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V
Symbol IDDlow IDDhigh VDDZ fosc fosc ten(O) tr tf RthJSB case SOT-89B RthJA case TO-92UA
1)
Parameter Low Current Consumption over Temperature Range High Current Consumption over Temperature Range Overvoltage Protection at Supply Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside
Pin No. 1
Min. 2
Typ. 3.3
Max. 5
Unit mA
Conditions
1
12
14.3
17
mA IDD = 25 mA, TJ = 25 C, t = 20 ms TJ = 25 C
1
-
28.5
32
V
-
90
145
-
kHz
-
75
145
-
kHz s s s K/W
1)
1
20
30
1 1 - -
0.4 0.4 150
1.6 1.6 200
VDD = 12 V, Rs = 30 VDD = 12 V, Rs = 30 Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-3
Thermal Resistance Junction to Soldering Point
-
-
150
200
K/W
B > BON + 2 mT or B < BOFF - 2 mT for HAL 55x,
B > BOFF + 2 mT or B < BON - 2 mT for HAL 56x
5.0
2.0
2.0
1.0
Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm
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Micronas
HAL55x, HAL56x
3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching Type HAL 556 unipolar Parameter TJ -40 C 25 C 100 C 170 C HAL 560 unipolar inverted -40 C 25 C 100 C 170 C HAL 566 unipolar inverted -40 C 25 C 100 C 170 C Min. 3.4 3.4 3.2 2.8 41 41 41 38 2.1 2 1.85 1 On point BON Typ. 6.3 6 5.5 5 46.5 46.6 45.7 44.2 4 3.9 3.8 3.4 Max. 7.7 7.4 7.2 7.6 52 52 52 50 5.9 5.7 5.7 6.3 Min. 2.1 2 1.9 1 47 46 45 42 3.4 3.4 3.25 2.2 Off point BOFF Typ. 4.2 3.8 3.7 3.5 53 52.5 41.1 49 6 5.9 5.6 4.8 Max. 5.9 5.7 5.7 6.2 59 58.5 57.5 55.5 7.7 7.2 7 7.6 Hysteresis BHYS Min. 0.8 0.5 0.3 0.2 4 3 2 2 0.8 0.5 0.3 0.2 Typ. 2.1 1.8 1.8 1.5 6.5 6 5.4 4.8 2 2 1.8 1.4 Max. 3 2.8 2.8 3.2 10 9 8 8 2.8 2.7 2.6 3 mT mT mT mT mT mT mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 12 and following.
Micronas
9
HAL55x, HAL56x
mA 25 20 IDD 15 10 5 0 -5
HAL 55x, HAL 56x
mA 20 18
HAL 55x, HAL 56x
IDDhigh
IDD
16 IDDhigh 14 12 VDD = 4 V
IDDlow
10 8
VDD = 12 V VDD = 24 V
TA = -40 C -10 -15 -20 -15-10 -5 0 TA = 25 C TA = 100 C TA = 170 C 5 10 15 20 25 30 35 V VDD
6 4 2 0 -50 200 C IDDlow
0
50
100
150 TA
Fig. 3-4: Typical current consumption versus supply voltage
Fig. 3-6: Typical current consumption versus ambient temperature
mA 20 18 IDD 16 14 12
HAL 55x, HAL 56x
kHz 200 180
HAL 55x, HAL 56x
IDDhigh
fosc 160 140 120
TA = -40 C 10 8 6 4 2 0 IDDlow TA = 25 C TA = 100 C TA = 170 C 60 40 20 0 -50 200 C 100 VDD = 4 V 80 VDD = 12 V VDD = 24 V
0
1
2
3
4 VDD
5
6V
0
50
100
150 TA
Fig. 3-5: Typical current consumption versus supply voltage
Fig. 3-7: Typ. internal chopper frequency versus ambient temperature
10
Micronas
HAL55x, HAL56x
kHz 200 180 fosc 160 140 120 100
HAL 55x, HAL 56x
kHz 200 180 fosc 160 140 120 100
HAL 55x, HAL 56x
TA = -40 C 80 60 40 20 0 TA = 25 C TA = 100 C TA = 170 C 40 20 0 80 60
TA = -40 C TA = 25 C TA = 100 C TA = 170 C
0
5
10
15
20
25 VDD
30 V
3
4
5
6
7 VDD
8V
Fig. 3-8: Typ. internal chopper frequency versus supply voltage
Fig. 3-9: Typ. internal chopper frequency versus supply voltage
Micronas
11
HAL556
4. Type Description 4.1. HAL 556 The HAL 556 is a very sensitive unipolar switching sensor (see Fig. 4-1). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 55x, HAL 56x two-wire sensor family, the HAL566 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: - switching type: unipolar - very high sensitivity - typical BON: 6 mT at room temperature - typical BOFF: 4 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 IDDlow BOFF BON B Applications The HAL 556 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption
IDDhigh BHYS
Fig. 4-1: Definition of magnetic switching points for the HAL 556
Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 3.4 3.4 3.2 3 2.8 On point BON Typ. 6.3 6 5.5 5.2 5 Max. 7.7 7.4 7.2 7.4 7.6 Off point BOFF Min. 2.1 2 1.9 1.2 1 Typ. 4.2 3.8 3.7 3.6 3.5 Max. 5.9 5.7 5.7 6 6.2 Hysteresis BHYS Min. 0.8 0.5 0.3 0.2 0.2 Typ. 2.1 1.8 1.8 1.6 1.5 Max. 3 2.8 2.8 3 3.2 2.7 Magnetic Offset Min. Typ. 5.2 4.9 4.6 4.4 4.2 6.5 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - upper limit for BHYS at -40 C, 25 C, and 100 C; limits for BOffset at 25 C changed - specification for 140 C and 170 C added
12
Micronas
HAL556
mT 8 7
HAL 556
mT 8 BONmax 7 BONtyp 6 BOFFmax 5 BOFFtyp 4 3
HAL 556
BON BOFF
BON 6 5 4 3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C TA = 170 C 0 5 10 15 20 25 VDD 30 V
BON BOFF
BOFF
BONmin BOFFmin VDD = 4 V
2 1 0 -50
VDD = 12 V VDD = 24 V 0 50 100 150 TA, TJ 200 C
Fig. 4-2: Typ. magnetic switching points versus supply voltage
Fig. 4-4: Magnetic switching points versus temperature
mT 8 7
HAL 556
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
BON 6 5 4 3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V
BOFF
Fig. 4-3: Typ. magnetic switching points versus supply voltage
Micronas
13
HAL560
4.2. HAL 560 The HAL 560 is a low sensitive unipolar switching sensor with an inverted output (see Fig. 4-5). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar inverted - low sensitivity - typical BON: 45.6 mT at room temperature - typical BOFF: 51.7 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON BOFF Applications The HAL 560 is designed for applications with one magnetic polarity and strong magnetic amplitudes at the sensor position where an inverted output signal is required such as: - applications with strong magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption IDDhigh BHYS IDDlow B
Fig. 4-5: Definition of magnetic switching points for the HAL 560
Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 41 41 41 39 38 On point BON Typ. 46.5 46.5 45.7 44.8 44.2 Max. 52 52 52 51 50 Off point BOFF Min. 47 46 45 43.5 42 Typ. 53 52.5 51.1 49.8 49 Max. 59 58.5 57.5 56.5 55.5 Hysteresis BHYS Min. 4 3 2 2 2 Typ. 6.5 6 5.4 5 4.8 Max. 10 9 8 8 8 Magnetic Offset Min. Typ. 49.8 49.5 48.4 47.3 46.6 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - tighter specification for BOFF at -40 C, 25 C, and 100 C - specification for 140 C and 170 C added
14
Micronas
HAL560
mT 60
HAL 560
mT 60 BOFFmax
HAL 560
BON BOFF 55 BOFF
BON BOFF 55 BONmax BONtyp
BOFFtyp
50
50
45 TA = -40 C 40 TA = 25 C TA = 100 C 35 TA = 170 C
BON
45 BOFFmin 40 BONmin VDD = 4 V VDD = 12 V VDD = 24 V
35
30
0
5
10
15
20
25 VDD
30 V
30 -50
0
50
100
150 TA, TJ
200 C
Fig. 4-6: Typ. magnetic switching points versus supply voltage
Fig. 4-8: Magnetic switching points versus temperature
mT 60
HAL 560
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF 55
BOFF
50
45 BON TA = -40 C 40 TA = 25 C TA = 100 C 35 TA = 170 C
30
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-7: Typ. magnetic switching points versus supply voltage
Micronas
15
HAL566
4.3. HAL 566 The HAL 566 is a very sensitive unipolar switching sensor with an inverted output (see Fig. 4-9). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HAL 55x, HAL 56x two-wire sensor family, the HAL556 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: - switching type: unipolar inverted - high sensitivity - typical BON: 4 mT at room temperature - typical BOFF: 5.9 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON BOFF Applications The HAL 566 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption IDDhigh BHYS IDDlow B
Fig. 4-9: Definition of magnetic switching points for the HAL 566
Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 2.1 2 1.85 1.3 1 On point BON Typ. 4 3.9 3.8 3.6 3.4 Max. 5.9 5.7 5.7 6 6.3 Off point BOFF Min. 3.4 3.4 3.25 2.6 2.2 Typ. 6 5.9 5.6 5.2 4.8 Max. 7.7 7.2 7 7.3 7.6 Hysteresis BHYS Min. 0.8 0.5 0.3 0.2 0.2 Typ. 2 2 1.8 1.6 1.4 Max. 2.8 2.7 2.6 3 3 3 Magnetic Offset Min. Typ. 5 4.9 4.7 4.4 4.1 6.2 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Changes to the previous edition: - specification for 140 C and 170 C added
16
Micronas
HAL566
mT 8 7 6 5
HAL 566
mT 8 7 6 BONmax 5 BONtyp 4 3 BOFFtyp BOFFmax
HAL 566
BON BOFF
BON BOFF BOFF
BON 4 3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C TA = 170 C 0 5 10 15 20 25 VDD 30 V 2 1 0 -50
BOFFmin BONmin VDD = 4 V VDD = 12 V VDD = 24 V 0 50 100 150 TA, TJ 200 C
Fig. 4-10: Typ. magnetic switching points versus supply voltage
Fig. 4-12: Magnetic switching points versus temperature
mT 8 7 6 5 4 3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C TA = 170 C 3 3.5 4.0 4.5 5.0
HAL 566
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
BOFF
BON
5.5 VDD
6.0 V
Fig. 4-11: Typ. magnetic switching points versus supply voltage
Micronas
17
HAL55x, HAL56x
5. Application Notes 5.1. Application Circuit Figure 5-1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 4 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: * 4V V R Lmax + SUPmin 17 mA
1 VDD
5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Typically, the sensors operate with supply voltages above 3 V. However, below 4 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 4 V is not tested on a regular base. For special test conditions, please contact Micronas.
VSUP VSIG
5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the current consumption is not defined and can toggle between low and high. HAL556: For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 to 30 ) and a capacitor both placed close to the sensor are recommended (see figure 5-2). In this case, the maximum RL can be calculated as: * 4V V R Lmax + SUPmin * RV 17 mA
1 VDD RV VSIG 4.7 nF RL 2 GND
RL
2 GND
Fig. 5-1: Application Circuit 1
After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL560, HAL 566: In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF.
VSUP
Fig. 5-2: Application Circuit 2
18
Micronas
HAL55x, HAL56x
5.4. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation is valid: T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 s to 1 ms, the following equation can be used: t on DT + I DD * V DD * R th * t off ) t on Fig. 5-3: Recommended EMC test circuit 5.5. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-2). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839. Note: The international standard ISO 7637 is similar to the product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results.
RV1 100
RV2 30 1 VDD
VEMC NC 4.7 nF 2 GND
Micronas
19
HAL55x, HAL56x
6. Data Sheet History 1. Final data sheet: "HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, April 6, 1999, 6251-425-1DS. First release of the final data sheet. 2 Final data sheet: "HAL 556, HAL 560, HAL 566, TwoWire Hall Effect Sensor Family, Aug. 3, 2000, 6251-425-2DS. Second release of the final data sheet. Major changes: - magnetic characteristics for HAL 556 and HAL 560 changed. Please refer to pages 12 and 14 for details. - new temperature ranges "K" and "A" added - temperature range "C" removed - outline dimensions for SOT-89B: reduced tolerances - SMD package SOT-89A removed
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (08/2000) Order No. 6251-425-2DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
20
Micronas
HAL 11x, HAL 5xx, HAL 62x
Data Sheet Supplement
Subject: Data Sheet Concerned:
Improvement of SOT-89B Package HAL 114, 115, 6251-456-2DS, Dec. 20, 1999 HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000 No. 1/ 6251-531-1DSS July 4, 2000
Supplement: Edition:
Changes: - position tolerance of the sensitive area reduced - tolerances of the outline dimensions reduced
- thickness of the leadframe changed to 0.15 mm (old 0.125 mm) - SOT-89A will be discontinued in December 2000
sensitive area 4.55 0.15 0.3 1.7 2 y 0.2
4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4
2.55 top view
1.15
branded side
0.06 0.04
SPGS0022-5-A3/2E
Position of sensitive area HAL 114, 115 HAL 50x, 51x HAL 621, 629 x y center of the package 0.95 mm nominal HAL 55x, HAL 56x
center of the package 0.85 mm nominal
Note: A mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerance of the sensitive area is defined in the package diagram.
Micronas
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